CGH55015F2

MACOM
941-CGH55015F2
CGH55015F2

Mfr.:

Description:
GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt

Datasheet:
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Learn more about MACOM CGH55015F2

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440166
N-Channel
120 V
1.5 A
- 3 V
- 40 C
+ 150 C
Brand: MACOM
Configuration: Single
Gain: 12 dB
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 4.5 GHz
Output Power: 10 W
Packaging: Tray
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 500 mg
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Compliance Codes
TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854239099
KRHTS:
8541299000
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

In Stock: 41

Stock:
41
Can Dispatch Immediately
On Order:
100
Expected 24/08/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
129,71 € 129,71 €
101,80 € 1 018,00 €
101,79 € 10 179,00 €
500 Quote

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