GCMS020B120S1-E1

SemiQ
148-GCMS020B120S1-E1
GCMS020B120S1-E1

Mfr.:

Description:
Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 30   Multiples: 30
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
24,31 € 729,30 €
22,70 € 2 724,00 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: Discrete Semiconductor Modules
RoHS:  
MOSFET-SiC SBD Modules
Silicon Carbide (SiC) Module
SiC
1.49 V
- 5 V, + 10 V
Screw Mount
SOT-227-4
- 55 C
+ 175 C
GCMS
Tube
Brand: SemiQ
Configuration: Single
Fall Time: 25 ns
Id - Continuous Drain Current: 113 A
Pd - Power Dissipation: 395 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 28 mOhms
Rise Time: 8 ns
Factory Pack Quantity: 30
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 25 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
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Attributes selected: 0

Datasheet

USHTS:
8541100080
ECCN:
EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.

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