It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX080B120S1-E1

Name: SemiQ GCMX080B120S1-E1
Brand: SemiQ
SKU: 148-GCMX080B120S1-E1
Price: 17.46 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX080B120S1-E1

Mfr. No:

GCMX080B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 80mO MOSFET SOT-227

Datasheet:

GCMX080B120S1-E1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX080B120S1-E1

In Stock: 7

Stock:: 7 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	17,46 €	17,46 €
	12,54 €	125,40 €
	10,34 €	1 034,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	77 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	142 W
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	11 ns
If - Forward Current:	10 A
Product Type:	MOSFET Modules
Rise Time:	4 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Type:	High Speed Switching
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	9 ns
Vf - Forward Voltage:	3.8 V
Vr - Reverse Voltage:	1.2 kV

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX080B120S1-E1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.