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IPD220N06L3GATMA1

Name: Infineon IPD220N06L3GATMA1
Brand: Infineon Technologies
SKU: 726-IPD220N06L3GATM1
Price: 1.04 EUR
Availability: InStock

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Mouser No:

726-IPD220N06L3GATM1

Mfr. No:

IPD220N06L3GATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPD220N06L3GATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPD220N06L3GATMA1

In Stock: 3 836

Stock:: 3 836 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,04 €	1,04 €
	0,654 €	6,54 €
	0,431 €	43,10 €
	0,335 €	167,50 €
	0,304 €	304,00 €
Full Reel (Order in multiples of 2500)
	0,261 €	652,50 €
	0,258 €	1 290,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	36 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	3 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPD220N06L3 G SP005559927

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Datasheet

IPD220N06L3GATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.