IQEH80NE2LM7UCGSCATMA1

Infineon Technologies
726-IQEH80NE2LM7UCGS
IQEH80NE2LM7UCGSCATMA1

Mfr.:

Description:
MOSFETs OptiMOS 7 Power -Transistor, 25 V

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies IQEH80NE2LM7UCGSCATMA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
N-Channel
1 Channel
25 V
282 A
800 uOhms
16 V
2 V
17.2 nC
- 55 C
+ 175 C
107 W
Enhancement
OptiMOS
Reel
Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 2.7 ns
Forward Transconductance - Min: 50 S
Product Type: MOSFETs
Rise Time: 1.4 ns
Series: OptiMOS 7
Factory Pack Quantity: 6000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 20.1 ns
Typical Turn-On Delay Time: 5.4 ns
Part # Aliases: IQEH80NE2LM7UCGSC SP006008718
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

N-Channel OptiMOS™ 7 25V Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs deliver application-optimized performance, enabling peak performance for data centers, servers, AI, and more. The MOSFETs are available in hard-switching and soft-switching topologies. The hard-switching-optimized devices feature outstanding Miller ratios, FOMs, and RDS(on). The MOSFETs optimized for soft switching offer ultra-low RDS(on) and FOMQg.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOMoss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.

In Stock: 5 710

Stock:
5 710 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,70 € 2,70 €
1,75 € 17,50 €
1,21 € 121,00 €
0,98 € 490,00 €
0,937 € 937,00 €
0,877 € 2 192,50 €
Full Reel (Order in multiples of 6000)
0,877 € 5 262,00 €

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