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NVMFS6H818NLT1G

Name: onsemi NVMFS6H818NLT1G
Brand: onsemi
SKU: 863-NVMFS6H818NLT1G
Price: 4.59 EUR
Availability: InStock

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Mouser No:

863-NVMFS6H818NLT1G

Mfr. No:

NVMFS6H818NLT1G

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL SO8FL

Datasheet:

NVMFS6H818NLT1G Datasheet

ECAD Model:

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In Stock: 1 083

Stock:: 1 083 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,59 €	4,59 €
	3,06 €	30,60 €
	2,19 €	219,00 €
	2,11 €	1 055,00 €
	1,79 €	1 790,00 €
Full Reel (Order in multiples of 1500)
	1,79 €	2 685,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	135 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	64 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NVMFS6H818NL
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NVMFS6H818NLT1G Datasheet

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMFS6H8x Power MOSFETs

onsemi NVMFS6H8x Power MOSFETs offer 80V, single N-channel, and a small footprint for a compact design. These power MOSFETs are available in 2.1mΩ, 2.8mΩ, 3.7mΩ, and 3.2mΩ R_DS(on)resistance ranges. Features include low R_DS(on) to minimize conduction losses, low Q_G, and low capacitance. The NVMFS6H8x power MOSFETs are RoHS compliant, PPAP capable, and AEC-Q101 qualified. These power MOSFETs operate at -55°C to 175°C operating temperature range.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).