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SISF04DN-T1-GE3

Name: Vishay SISF04DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISF04DN-T1-GE3
Price: 1.72 EUR
Availability: InStock

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Mouser No:

78-SISF04DN-T1-GE3

Mfr. No:

SISF04DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F

Datasheet:

SISF04DN-T1-GE3 Datasheet

ECAD Model:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,72 €	1,72 €
	1,09 €	10,90 €
	0,73 €	73,00 €
	0,599 €	299,50 €
	0,524 €	524,00 €
Full Reel (Order in multiples of 3000)
	0,503 €	1 509,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	108 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69.4 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	6 ns
Forward Transconductance - Min:	115 S
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	SISF
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	1 g

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Datasheet

SISF04DN-T1-GE3 Datasheet

Application Notes

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.