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NVMFWS002N10MCLT1G

Name: onsemi NVMFWS002N10MCLT1G
Brand: onsemi
SKU: 863-MFWS002N10MCLT1G
Price: 3.65 EUR
Availability: InStock

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Mouser No:

863-MFWS002N10MCLT1G

Mfr. No:

NVMFWS002N10MCLT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LL SO8FL HE

Datasheet:

NVMFWS002N10MCLT1G Datasheet

ECAD Model:

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Learn more about onsemi NVMFWS002N10MCLT1G

In Stock: 1 136

Stock:: 1 136 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,65 €	3,65 €
	2,40 €	24,00 €
	1,69 €	169,00 €
	1,55 €	775,00 €
	1,44 €	1 440,00 €
Full Reel (Order in multiples of 1500)
	1,44 €	2 160,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	177 A
Rds On - Drain-Source Resistance:	3.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	97 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	164 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	105 ns
Forward Transconductance - Min:	200 S
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	NVMFWS002N10MC
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	250 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NVMFWS002N10MCLT1G Datasheet

PCN

Product Change Notification 2024-07-03 (PDF)

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMFWS002N10MCL Single N-Channel Power MOSFETs

onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs feature a 177A continuous drain current, 2.8mΩ at 10V R_DS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.