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FM25V01A-G

Name: Infineon FM25V01A-G
Brand: Infineon Technologies
SKU: 727-FM25V01A-G
Price: 5.52 EUR
Availability: InStock

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Mouser No:

727-FM25V01A-G

Mfr. No:

FM25V01A-G

Mfr.:

Infineon Technologies

Description:

F-RAM FRAM

Datasheet:

FM25V01A-G Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1 556

Stock:: 1 556 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,52 €	5,52 €
	5,13 €	51,30 €
	4,96 €	124,00 €
	4,93 €	246,50 €
2 910	Quote

Alternative Packaging

Mfr. Part No.:

FM25V01A-GTR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

6,37 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	F-RAM
RoHS:
Memory Size:	128 kbit
Interface Type:	SPI
Maximum Clock Frequency:	25 MHz, 40 MHz
Organisation:	16 k x 8
Package/Case:	SOIC-8
Supply Voltage - Min:	2 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tube
Brand:	Infineon Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Operating Supply Voltage:	3.3 V
Product Type:	FRAM
Factory Pack Quantity:	970
Subcategory:	Memory & Data Storage
Unit Weight:	540 mg

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Datasheet

FM25V01A-G Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

Compliance Codes

TARIC:: 8542329000
CNHTS:: 8542329090
CAHTS:: 8542320090
USHTS:: 8542320071
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Thailand
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

FM25V01A 128-Kbit Serial (SPI) F-RAM

Infineon Technologies FM25V01A 128-Kbit Serial (SPI) F-RAM is a nonvolatile memory that uses a highly advanced ferroelectric process. FM25V01A is similar to RAM in performance and provides data retention for 151 years. F-RAM provides write operations at high speeds and has a very fast serial peripheral interface (SPI). This feature enhances the high-speed write capability of F-RAM technology. It consumes low power and has a voltage operation of 2V to 3.6V. The Infineon FM25V01A can support 100 million times more write cycles than EEPROM.