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STD12N60DM2AG

Name: STMicroelectronics STD12N60DM2AG
Brand: STMicroelectronics
SKU: 511-STD12N60DM2AG
Price: 2.92 EUR
Availability: OutOfStock

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Mouser No:

511-STD12N60DM2AG

Mfr. No:

STD12N60DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in

Complete Your Design

Datasheet:

STD12N60DM2AG Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 2 383

Expected 27/11/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,92 €	2,92 €
	1,90 €	19,00 €
	1,32 €	132,00 €
	1,10 €	550,00 €
	1,04 €	1 040,00 €
Full Reel (Order in multiples of 2500)
	0,955 €	2 387,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	440 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	14.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STD12N60DM2AG
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	330 mg

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Datasheet

STD12N60DM2AG Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STD12N60DM2AG N-channel Power MOSFET

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive-grade N-channel power MOSFET offers very low recovery charge (Q_rr) and recovery time (t_rr) combined with low R_DS(on). This power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is suitable for demanding high-efficiency converters and for bridge topologies and ZVS phase-shift converters.