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FDT4N50NZU

Name: onsemi FDT4N50NZU
Brand: onsemi
SKU: 863-FDT4N50NZU
Price: 1.63 EUR
Availability: InStock

Mouser No:

863-FDT4N50NZU

Mfr. No:

FDT4N50NZU

Mfr.:

onsemi

Description:

MOSFETs UNIFET II 3OHM SOT223

Datasheet:

FDT4N50NZU Datasheet

ECAD Model:

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In Stock: 4 984

Stock:: 4 984 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,63 €	1,63 €
	1,02 €	10,20 €
	0,70 €	70,00 €
	0,555 €	277,50 €
	0,513 €	513,00 €
	0,48 €	960,00 €
Full Reel (Order in multiples of 4000)
	0,48 €	1 920,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	9.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	MOSFETs
Series:	FDT4N50NZU
Factory Pack Quantity:	4000
Subcategory:	Transistors

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Datasheet

FDT4N50NZU Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

FDT4N50NZU UniFET II MOSFET

onsemi FDT4N50NZU UniFET II MOSFET is a high voltage MOSFET based on advanced planar stripe and DMOS technology. The MOSFET has a small on-state resistance among the planar MOSFET. It provides superior switching performance and higher avalanche energy strength. An internal gate-source ESD diode allows the UniFET II MOSFET to withstand over 2kV HBM surge stress.