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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
IXYS MOSFETs 0.2 Amps 500V 30 Rds
Datasheet
3 666In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 200 mA 30 Ohms - 20 V, 20 V 5 V - 55 C + 150 C 1.1 W Depletion Tube
IXYS MOSFETs TO247 1.7KV 1A N-CH DEPL
Datasheet
881In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 1 A 16 Ohms - 20 V, 20 V 2.5 V 47 nC - 55 C + 150 C 290 W Depletion Tube
IXYS MOSFETs TO263 1.7KV 1A N-CH DEPL
Datasheet
300Expected 06/07/2026
Min.: 1
Mult.: 1

Si SMD/SMT TO-263HV-2 N-Channel 1 Channel 1.7 kV 1 A 16 Ohms - 20 V, 20 V 4.5 V 47 nC - 55 C + 150 C 290 W Depletion Tube
IXYS MOSFETs 0.1 Amps 1000V 110 Rds
Datasheet
386In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 400 mA 80 Ohms - 20 V, 20 V 2 V 5.8 nC - 55 C + 150 C 25 W Depletion Tube
IXYS MOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25
Datasheet
61In Stock
1 400Expected 14/12/2026
Min.: 1
Mult.: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 100 mA 80 Ohms - 20 V, 20 V 4.5 V 5.8 nC - 55 C + 150 C 1.1 W Depletion Tube