MPQ1918 Half-Bridge GaN/MOSFET Drivers
Monolithic Power Systems (MPS) MPQ1918 Half-Bridge GaN/MOSFET Drivers are designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage. These half-bridge drivers feature independent High-Side (HS) and Low-Side (LS) Pulse-Width Modulation (PWM) inputs. The MPQ1918 half-bridge drivers provide a bootstrap technique to allow the HS driver voltage to operate at up to 100VDC. These drivers include a 3.7V to 5.5V VCCvoltage range, 0.27Ω/1.2Ω pull-down/pull-up resistance and separate gate outputs for adjustable Turn-On and Turn-Off capabilities. The MPQ1918 half-bridge drivers are AEC-Q100 Grade 1 qualified and available in an FCQFN-14 package. Typical applications include half-bridge and full-bridge converters, audio class-D amplifiers, synchronous buck converters, and power modules.
