UF4SC120023B7S

onsemi
772-UF4SC120023B7S
UF4SC120023B7S

Mfr.:

Description:
SiC MOSFETs 1200V/23MOSICFETG4TO263-7

Datasheet:
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Learn more about onsemi UF4SC120023B7S

In Stock: 1 081

Stock:
1 081 Can Dispatch Immediately
Factory Lead Time:
28 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
20,85 € 20,85 €
15,20 € 152,00 €
Full Reel (Order in multiples of 800)
14,90 € 11 920,00 €
2 400 Quote

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
72 A
23 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
385 W
Enhancement
SiC FET
Brand: onsemi
Configuration: Single
Fall Time: 10 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC FET
Product Type: SiC MOSFETS
Rise Time: 25 ns
Series: UF4SC
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 64 ns
Typical Turn-On Delay Time: 23 ns
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

UF4SC120023B7S G4 Silicone Carbide (SiC) FETs

onsemi UF4SC120023B7S G4 Silicone Carbide (SiC) FETs are 1200V, 23mΩ devices based on a unique cascode circuit configuration. A normally-on SiC JFET is co-packaged in this configuration with a Si MOSFET, producing a normally-off SiC FET device. The device’s standard gate-drive characteristics allow the use of off-the-shelf gate drivers, thus requiring minimal re-design when replacing Si IGBTs, Si super junction devices, or SiC MOSFETs. Available in a space-saving D2PAK-7L package (enabling automated assembly), these devices exhibit an ultra-low gate charge and exceptional reverse recovery characteristics. onsemi UF4SC120023B7S G4 SiC FETs are ideal for switching inductive loads and applications requiring a standard gate drive.

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