+358 (0) 800119414

Part of the TTI Family of Specialists Contact Mouser (Lithuania) +358 (0) 800119414 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

LSIC1MO120G0040

Name: IXYS LSIC1MO120G0040
Brand: IXYS
SKU: 576-LSIC1MO120G0040
Price: 23.62 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

576-LSIC1MO120G0040

Mfr. No:

LSIC1MO120G0040

Mfr.:

IXYS

Description:

SiC MOSFETs TO247 1.2KV 50A N-CH SIC

Datasheet:

LSIC1MO120G0040 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS LSIC1MO120G0040

In Stock: 431

Stock:: 431 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 29 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 431 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	23,62 €	23,62 €
	17,25 €	172,50 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	175 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	8 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Series:	LSIC1MO120G0xxx
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

LSIC1MO120G0040 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

LSIC1MO120G0x N-Channel SiC MOSFETs

IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.