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NTMTS002N10MCTXG

Name: onsemi NTMTS002N10MCTXG
Brand: onsemi
SKU: 863-NTMTS002N10MCTXG
Price: 6.36 EUR
Availability: InStock

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Mouser No:

863-NTMTS002N10MCTXG

Mfr. No:

NTMTS002N10MCTXG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V SINGLE NCH PQFN8X8 STD CLIP 2.0 MOHMS MAX

Datasheet:

NTMTS002N10MCTXG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMTS002N10MCTXG

In Stock: 2 525

Stock:: 2 525 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,36 €	6,36 €
	4,36 €	43,60 €
	3,30 €	330,00 €
	3,10 €	3 100,00 €
Full Reel (Order in multiples of 3000)
	3,09 €	9 270,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	236 A
Rds On - Drain-Source Resistance:	5.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	89 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	255 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	SIngle
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	26 ns
Forward Transconductance - Min:	180 S
Product Type:	MOSFETs
Rise Time:	19 ns
Series:	NTMTS002N10MC
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	59 ns
Typical Turn-On Delay Time:	29 ns

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Datasheet

NTMTS002N10MCTXG Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NTMTS002N10MC Single N-Channel Power MOSFETs

onsemi NTMTS002N10MC Single N-Channel Power MOSFETs are crafted using the advanced Power Trench process featuring Shielded Gate technology. The onsemi NTMTS002N10MC MOSFETs have a compact 8mm x 8mm footprint and enable space-efficient designs. The devices' low R_DS(on) ensures minimal conduction losses, while low Q_G and capacitance reduce driver losses, ensuring superior switching performance. Encased in the Power 88 package, these MOSFETs are Pb-free and RoHS-compliant, aligning with modern environmental standards.