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SIJK140E-T1-GE3

Name: Vishay SIJK140E-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIJK140E-T1-GE3
Price: 6.33 EUR
Availability: InStock

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Mouser No:

78-SIJK140E-T1-GE3

Mfr. No:

SIJK140E-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 40-V (D-S) MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SIJK140E-T1-GE3 Datasheet

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Learn more about Vishay / Siliconix SIJK140E-T1-GE3

In Stock: 2 005

Stock:: 2 005 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,33 €	6,33 €
	4,47 €	44,70 €
	3,86 €	386,00 €
	3,65 €	5 475,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 10x12
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	795 A
Rds On - Drain-Source Resistance:	470 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	312 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	536 W
Channel Mode:	Enhancement
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	45 ns
Product Type:	MOSFETs
Rise Time:	45 ns
Series:	SiJK140E
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	40 ns

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Datasheet

SIJK140E-T1-GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SiJK140E N-Channel 40 V (D-S) MOSFET

Vishay / Siliconix SiJK140E N-Channel 40V (D-S) MOSFET features TrenchFET^® Gen V power technology. This MOSFET optimizes power efficiency, and the R_DS(on) minimizes power loss during conduction, ensuring efficient operation. The SiJK140E MOSFET is 100% R_g and UIS tested. This power MOSFET enhances power dissipation and lowers thermal resistance (R_thJC). Typical applications include synchronous rectification, automation, OR-ing and hot-swap switches, power supplies, motor drive control, and battery management.

Superjunction MOSFETs in PowerPAK® 10 x 12

Vishay / Siliconix Superjunction MOSFETs in PowerPAK^® 10 x 12 packaging feature power technology. These power MOSFETs optimize power efficiency, while the R_DS(on) minimizes power loss during conduction, ensuring efficient operation. These components are 100% Rg and UIS tested. Vishay / Siliconix Superjunction MOSFETs enhance power dissipation and lower thermal resistance (R_thJC). Typical applications include synchronous rectification, automation, and power supplies.