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PSMN1R9-80SSEJ

Name: Nexperia PSMN1R9-80SSEJ
Brand: Nexperia
SKU: 771-PSMN1R9-80SSEJ
Price: 6.33 EUR
Availability: InStock

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See Product Specifications

Mouser No:

771-PSMN1R9-80SSEJ

Mfr. No:

PSMN1R9-80SSEJ

Mfr.:

Nexperia

Description:

MOSFETs The factory is currently not accepting orders for this product.

Datasheet:

PSMN1R9-80SSEJ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN1R9-80SSEJ

In Stock: 46

Stock:: 46

Can Dispatch Immediately

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On Order:: 3 818

Expected 19/04/2027
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,33 €	6,33 €
	4,24 €	42,40 €
	3,41 €	341,00 €
	3,03 €	1 515,00 €
	2,50 €	2 500,00 €
Full Reel (Order in multiples of 2000)
	2,43 €	4 860,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-1235-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	286 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	155 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Fall Time:	46 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	46 ns
Part # Aliases:	934662574118

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The factory is currently not accepting orders for this product.

Filter Document:

Datasheet

PSMN1R9-80SSEJ Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

PCN

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PSMN1R9 & PSMN2R3 N-Channel MOSFETs

Nexperia PSMN1R9 and PSMN2R3 N-Channel MOSFETs are designed for extreme performance and reliability. The Nexperia PSMN devices are part of Nexperia's Application Specific MOSFETs (ASFETs) lineup. The MOSFETs are specifically engineered for hot-swap and soft-start applications and are qualified to operate at a temperature of up to 175°C. The devices boast low R_DSon and enhanced safe operating area performance, making them an ideal choice for demanding power management applications. The MOSFETs copper-clip LFPAK88 package provides high reliability and is robust enough to handle substantial inrush currents during turn-on. With low R_DSon and optimized efficiency, the PSMN1R9 and PSMN2R3 are standout solutions for power management systems.