NSV40301MZ4T3G

onsemi
863-NSV40301MZ4T3G
NSV40301MZ4T3G

Mfr.:

Description:
Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor AEC-Q101

ECAD Model:
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In Stock: 794

Stock:
794
Can Dispatch Immediately
On Order:
8 000
Expected 04/09/2026
Factory Lead Time:
25
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,894 € 0,89 €
0,559 € 5,59 €
0,366 € 36,60 €
0,282 € 141,00 €
0,255 € 255,00 €
0,233 € 466,00 €
Full Reel (Order in multiples of 4000)
0,211 € 844,00 €
0,19 € 1 520,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SOT-223-4
NPN
Single
5 A
40 V
40 V
6 V
2 W
215 MHz
- 55 C
+ 150 C
AEC-Q101
NSS40301MZ4
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 3 A
DC Current Gain hFE Max: 500
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 4000
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541290000
USHTS:
8541290055
ECCN:
EAR99

NSV40301MZ4 Bipolar Power Transistor

onsemi NSV40301MZ4 Bipolar Power Transistor is a combination of low saturation voltage and high gain low VCE(sat) NPN transistor. This bipolar transistor features a 40VDC collector-emitter voltage, 1ADC base current, and -55°C to 150°C operating and storage Junction temperature range. The NSV40301MZ4 bipolar power transistor is Pb, Halogen/BFR free, and RoHS compliant. Typical applications include voltage regulation, power management for portable devices, switching regulators, motor controls, and DC-DC converters.