NTMFS0D7N04XMT1G

onsemi
863-NTMFS0D7N04XMT1G
NTMFS0D7N04XMT1G

Mfr.:

Description:
MOSFETs 40V T10M IN S08FL PACKAGE

ECAD Model:
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In Stock: 188

Stock:
188
Can Dispatch Immediately
On Order:
6 000
Expected 02/10/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,04 € 2,04 €
1,32 € 13,20 €
0,894 € 89,40 €
0,716 € 358,00 €
0,63 € 630,00 €
Full Reel (Order in multiples of 1500)
0,595 € 892,50 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
323 A
700 uOhms
- 20 V, 20 V
3.5 V
72.1 nC
- 55 C
+ 175 C
134 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 6.32 ns
Forward Transconductance - Min: 244
Product Type: MOSFETs
Rise Time: 8.12 ns
Series: NTMFS0D7N04XM
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 39.1 ns
Typical Turn-On Delay Time: 25.8 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFS0D7N04XM Single N-Channel Power MOSFET

onsemi NTMFS0D7N04XM Single N-Channel Power MOSFET is a standard 40V gate level power MOSFET with leading on-resistance for motor driver applications. The lower on-resistance and gate charge can reduce conduction and driving losses. Good softness control for body diode reverse recovery can reduce voltage spike stress without an extra snubber circuit in an application.