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NTMFWS1D5N08XT1G

Name: onsemi NTMFWS1D5N08XT1G
Brand: onsemi
SKU: 863-NTMFWS1D5N08XT1G
Price: 3.16 EUR
Availability: InStock

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Mouser No:

863-NTMFWS1D5N08XT1G

Mfr. No:

NTMFWS1D5N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10S 80V SG NCH MOSFET SO8FL HE WF

Datasheet:

NTMFWS1D5N08XT1G Datasheet

ECAD Model:

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In Stock: 14 471

Stock:: 14 471 Can Dispatch Immediately

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Factory Lead Time:: 25 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,16 €	3,16 €
	2,06 €	20,60 €
	1,56 €	156,00 €
	1,35 €	675,00 €
	1,16 €	1 160,00 €
Full Reel (Order in multiples of 1500)
	1,06 €	1 590,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO8FL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	253 A
Rds On - Drain-Source Resistance:	1.43 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	83 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	194 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	176 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NTMFWS1D5N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NTMFWS1D5N08XT1G Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFWS1D5N08X Single N-Channel MOSFET

onsemi NTMFWS1D5N08X Single N-Channel MOSFET incorporates a low Q_RR and soft recovery body diode, reducing switching losses. The NTMFWS1D5N08X device offers low R_DS(on) to minimize conduction losses, ensuring efficient operation. Additionally, its low Q_G and capacitance contribute to minimizing driver losses. onsemi NTMFWS1D5N08X Single N-Channel MOSFET is lead free, halogen free, BFR free, and RoHS compliant.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.