STDRIVEG600

STMicroelectronics
511-STDRIVEG600
STDRIVEG600

Mfr.:

Description:
Gate Drivers High voltage half-bridge gate driver for GaN transistors
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STDRIVEG600

In Stock: 670

Stock:
670 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,75 € 4,75 €
3,62 € 36,20 €
3,34 € 83,50 €
3,02 € 302,00 €
2,87 € 717,50 €
2,79 € 1 395,00 €
2,75 € 2 750,00 €
2,72 € 5 440,00 €

Alternative Packaging

Mfr. Part No.:
STDRIVEG600TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
3,93 €
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
SOIC-16
2 Driver
1 Output
5.5 A, 6 A
4.75 V
20 V
7 ns
5 ns
- 40 C
+ 125 C
Tube
Brand: STMicroelectronics
Logic Type: CMOS, TTL
Moisture Sensitive: Yes
Output Voltage: 520 V
Product Type: Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.