TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Results: 37
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
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Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
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Infineon Technologies IGBTs INDUSTRY
Datasheet
30In Stock
5 520On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 90 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
Datasheet
12 040On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 74 A 250 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
1 000Expected 04/03/2027
Min.: 1
Mult.: 1
: 1 000

Si D2PAK-3 (TO-263-3) SMD/SMT Single 650 V 1.35 V - 20 V, 20 V 62 A 188 W - 40 C + 175 C Trenchstop IGBT5 Reel, Cut Tape
Infineon Technologies IGBTs INDUSTRY
Datasheet
1 307On Order
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 148 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs INDUSTRY
Datasheet
4 018Expected 16/10/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 55 A 188 W - 40 C + 175 C Trenchstop IGBT5 Tube

Infineon Technologies IGBTs IGBT PRODUCTS
Datasheet
3 360On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 74 A 255 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
166Expected 19/11/2026
Min.: 1
Mult.: 1

Si Through Hole Single 650 V 1.35 V - 20 V, 20 V 79 A 230 W - 40 C + 175 C Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 40 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 1 000

Si D2PAK-3 (TO-263-3) SMD/SMT Single 650 V 1.65 V - 20 V, 20 V 38 A 125 W - 40 C + 175 C Trenchstop IGBT5 Reel, Cut Tape, MouseReel
Infineon Technologies IGBTs HOME APPLIANCES
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 240
Mult.: 240

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 240
Mult.: 240

Si Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 274 W - 40 C + 175 C Trenchstop IGBT5 S5 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

- 20 V, 20 V Trenchstop IGBT5 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
Datasheet
Non-Stocked Lead-Time 53 Weeks
Min.: 240
Mult.: 240

Si TO-247-4 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 395 W - 40 C + 175 C Trenchstop IGBT5 Tube