SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs

Toshiba SSM6N357R and SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel components designed for relay driver applications. The SSM6N357R,LF comes with two channels, whereas the SSM3K357R,LF comes with a single channel. These AEC-Q101-qualified MOSFETs feature a 3V gate drive voltage, built-in internal Zener diodes/resistors, and a 2kV class Human Body Model (HBM) ESD rating. The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, +150°C maximum channel temperature, and 12.6mJ single-pulse avalanche energy.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Toshiba MOSFETs LowON Res MOSFET ID=.65A VDSS=60V
32 577In Stock
51 000Expected 09/10/2026
Cut Tape
0,542 €
0,244 €
0,214 €
0,162 €
Reel
0,122 €
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 60 V 650 mA 1.8 Ohms 12 V 1.3 V 1.5 nC - 55 C + 150 C 1.5 W Enhancement AEC-Q101 MOSV Reel, Cut Tape, MouseReel
Toshiba MOSFETs LowON Res MOSFET ID=.65A VDSS=60V
17 536In Stock
Cut Tape
1,11 €
0,774 €
0,489 €
0,303 €
Reel
0,199 €
Min.: 1
Mult.: 1
: 3 000
Si SMD/SMT TSOP-6 N-Channel 2 Channel 60 V 650 mA 1.8 Ohms 12 V 1.3 V 1.5 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 MOSV Reel, Cut Tape