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BGAV1A10E6327XTSA1

Name: Infineon BGAV1A10E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BGAV1A10E6327XTS
Price: 0.4 EUR
Availability: Discontinued

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Mouser No:

726-BGAV1A10E6327XTS

Mfr. No:

BGAV1A10E6327XTSA1

Mfr.:

Infineon Technologies

Description:

RF Amplifier RF SILICON MMIC

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BGAV1A10E6327XTSA1 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	3.4 GHz to 3.8 GHz
Operating Supply Voltage:	1.7 V to 1.9 V
Operating Supply Current:	5 mA
Gain:	22 dB
NF - Noise Figure:	1.3 dB
Type:	Low Noise Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	ATSLP-10-3
Technology:	Si
P1dB - Compression Point:	3 dBm
OIP3 - Third Order Intercept:	32 dBm
Minimum Operating Temperature:	- 30 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Reel
Brand:	Infineon Technologies
Input Return Loss:	13 dB
Isolation dB:	32 dB
Number of Channels:	1 Channel
Pd - Power Dissipation:	90 mW
Product Type:	RF Amplifier
Factory Pack Quantity:	4500
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	3.5 GHz
Part # Aliases:	BGA V1A10 E6327 SP001628074
Unit Weight:	2,450 mg

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Datasheet

BGAV1A10E6327XTSA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8537109899
CNHTS:: 8542339000
CAHTS:: 8537109920
USHTS:: 8542330001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Low Noise Amplifier (LNA) ICs

Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.

BGAx1A10 LTE LNA with Gain Control

Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate of LTE communications. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, and a low noise figure. The bypass mode reduces current consumption, and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control.