HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Results: 27
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
Datasheet
Non-Stocked Lead-Time 15 Weeks
Reel
0,823 €
0,751 €
0,75 €
Quote
Min.: 1 000
Mult.: 1 000
: 1 000
- 20 V, 20 V Reel
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Datasheet
Non-Stocked Lead-Time 22 Weeks
4,41 €
2,57 €
2,06 €
1,75 €
View
Min.: 1
Mult.: 1
Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 40 C + 175 C STGWT60H65FB Tube