A5Gx Airfast RF Power GaN Transistors

NXP Semiconductors  A5Gx Airfast RF Power GaN Transistors are 85W and 112W asymmetrical Doherty RF power GaN transistors. The NXP Semiconductors  A5Gx transistors are ideal for cellular base stations requiring wide bandwidths. The devices' performance is guaranteed within the range of the specified frequency for each part, but not outside it.

Results: 6
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Vds - Drain-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Operating Frequency
Minimum Operating Frequency
Technology

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
Datasheet
35In Stock
Min.: 1
Mult.: 1
: 250

1.995 GHz 1.93 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
Datasheet
208In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 2.2 GHz 2.11 GHz GaN-on-Si

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
Datasheet
19In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 850 MHz 717 MHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
Datasheet
5In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 1.88 GHz 1.805 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
Datasheet
2In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 2.69 GHz 2.496 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
Datasheet
Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 960 MHz 865 MHz GaN-on-Si