- 40 C DRAM

Results: 1 097
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Type Memory Size Data Bus Width Maximum Clock Frequency Package/Case Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Series Packaging
ISSI DRAM 512M 64Mx8 400MHz DDR2 1.8V
242Expected 12/10/2026
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 8 bit 400 MHz BGA-60 64 M x 8 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR86400E
ISSI DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s at 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
80On Order
Min.: 1
Mult.: 1

SDRAM - DDR3L 2 Gbit 8 bit BGA-78 256 M x 8 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR82560DL
ISSI DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 16Mx16, 143MHz, Cu 54 pin TSOP II RoHS
108Expected 19/10/2026
Min.: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C IS45S16160J
ISSI DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
108On Order
Min.: 1
Mult.: 1

SDRAM 64 Mbit 16 bit 166 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
239On Order
Min.: 1
Mult.: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
200Expected 19/03/2027
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
Alliance Memory DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1
6Expected 02/10/2026
Min.: 1
Mult.: 1
SDRAM - DDR 1 Gbit 16 bit 166 MHz TSOP-II-66 64 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C64M16D1 Tray
Intelligent Memory DRAM DDR2 1Gb, 1.8V, 64Mx16, 400MHz (800Mbps), -40C to +95C, FBGA-84 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz FBGA-84 64 M x 16 400 ps 1.7 V 1.9 V - 40 C + 95 C IM1G16D2 Tray
Intelligent Memory DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM 256 Mbit 16 bit 166 MHz FBGA-54 16 M x 16 5 ns 3 V 3.6 V - 40 C + 85 C IM2516SD Tray
Intelligent Memory DRAM DDR3 4Gb, 1.35V/1.5V, 512Mx8, 933MHz (1866Mbps), -40C to +95C, FBGA-78 Lead-Time 6 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR3L 4 Gbit 8 bit 933 MHz FBGA-78 512 M x 8 20 ns 1.283 V 1.45 V - 40 C + 95 C IM4G08D3 Tray
Intelligent Memory DRAM DDR2 512Mb, 1.8V, 32Mx16, 400MHz (800Mbps), -40C to +95C, FBGA-84 Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR2 512 Mbit 16 bit 400 MHz FBGA-60 32 M x 16 400 ps 1.7 V 1.9 V - 40 C + 95 C IM5116D2 Tray
Intelligent Memory DRAM DDR3 8Gb, 1.35V/1.5V, 1Gx8 (1CS), 933MHz (1866Mbps), -40C to +95C, FBGA-78 Non-Stocked Lead-Time 6 Weeks
Min.: 220
Mult.: 220

SDRAM - DDR3L 8 Gbit 8 bit 933 MHz FBGA-78 1 G x 8 20 ns 1.283 V 1.45 V - 40 C + 95 C IM8G08D3 Tray
GSI Technology DRAM LLDRAM II, 288Mb, x36, 533MHz, Industrial Temp Non-Stocked
Min.: 36
Mult.: 36

LLDRAM II 288 Mbit 36 bit 533 MHz uBGA-144 8 M x 36 1.7 V 1.9 V - 40 C + 95 C GS4288C36GL
GSI Technology DRAM 8M x 36 (288Meg) LLDRAM II Common I/O Non-Stocked
Min.: 36
Mult.: 36

LLDRAM II 288 Mbit 36 bit 533 MHz uBGA-144 8 M x 36 1.7 V 1.9 V - 40 C + 95 C GS4288C36GL Tray
GSI Technology DRAM 8M x 36 (288Meg) LLDRAM II Common I/O Non-Stocked
Min.: 36
Mult.: 36

LLDRAM II 288 Mbit 36 bit 533 MHz uBGA-144 8 M x 36 1.7 V 1.9 V - 40 C + 95 C GS4288C36GL Tray
GSI Technology DRAM LLDRAM II, 288Mb, x36, 300MHz, Industrial Temp Non-Stocked
Min.: 36
Mult.: 36

LLDRAM II 288 Mbit 36 bit 533 MHz uBGA-144 8 M x 36 1.7 V 1.9 V - 40 C + 95 C GS4288C36GL
SMARTsemi DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial N/A
Min.: 1
Mult.: 1

SDRAM - DDR3L 4 Gbit 8 bit 933 MHz FBGA-78 512 M x 8 1.283 V 1.575 V - 40 C + 85 C KTDM Tray
SMART Modular Technologies DRAM LPDDR4 16Gb 51 2Mx32 1.1V 4267Mbps 200-ball BGA Ind Distributed-Sold by SMART Non-Stocked Lead-Time 13 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

SDRAM - LPDDR4 16 Gbit FBGA-200 512 M x 32 3.5 ns 1.1 V 1.8 V - 40 C + 105 C Reel
Infineon Technologies DRAM SPCM Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 105 C Tray
Intelligent Memory DRAM DDR2 2Gb, 1.8V, 256Mx8, 400MHz (800Mbps), -40C to +95C, FBGA-60 Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR2 2 Gbit 8 bit 400 MHz FBGA-60 256 M x 8 400 ps 1.7 V 1.9 V - 40 C + 95 C IM2G08D2 Tray
Intelligent Memory DRAM DDR2 2Gb, 1.8V, 128Mx16, 400MHz (800Mbps), -40C to +95C, FBGA-84 Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz FBGA-84 128 M x 16 400 ps 1.7 V 1.9 V - 40 C + 95 C IM2G16D2 Tray
Intelligent Memory DRAM ECC LPDDR4, 4Gb, 1.1V, 128Mx32, 1600MHz (3200Mbps), -40C to +95C, FBGA-200 Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz FBGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 95 C IME4G32L4 Tray
Intelligent Memory DRAM ECC LPDDR4, 8Gb, 1.1V, 256Mx32, 1600MHz (3200Mbps), -40C to +95C, FBGA-200 Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 32 bit 1.6 GHz FBGA-200 256 M x 32 1.06 V 1.17 V - 40 C + 95 C IME8G32L4 Tray
AP Memory DRAM IoT RAM 128Mb QSPI (x1,x4) SDR 144/84MHz, HS, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 15 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

PSRAM (Pseudo SRAM) 128 Mbit 4 bit 144 MHz WLCSP-15 16 M x 8 1.62 V 1.98 V - 40 C + 85 C Reel
AP Memory DRAM IoT RAM 128Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS12808O-OBR-WB same density NRND Non-Stocked Lead-Time 20 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

PSRAM (Pseudo SRAM) 128 Mbit 8 bit / 16 bit 200 MHz WLCSP-24 16 M x 8/8 M x 16 1.62 V 1.98 V - 40 C + 85 C IoT RAM Reel