GANB012-040CBAZ

Name: Nexperia GANB012-040CBAZ
Brand: Nexperia
SKU: 771-GANB012-040CBAZ
Price: 1.75 EUR
Availability: InStock

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Mouser No:

771-GANB012-040CBAZ

Mfr. No:

GANB012-040CBAZ

Mfr.:

Nexperia

Description:

GaN FETs GANB012-040CBA/SOT8088/WLCSP12

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GANB012-040CBAZ Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	WLCSP-12
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	6 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	7.2 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	11 W
Channel Mode:	Enhancement
Technology:	GaN
Brand:	Nexperia
Configuration:	Single
Maximum Drain Gate Voltage:	40 V
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Part # Aliases:	934667632336

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Datasheet

GANB012-040CBAZ Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

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GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

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GANB8R0-040CBA Bi-Directional GaN FET

40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.

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GANB4R8-040CBA Bi-Directional GaN FET

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In Stock: 2 235

Stock:: 2 235 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,75 €	1,75 €
	0,77 €	7,70 €
	0,721 €	72,10 €
	0,572 €	286,00 €
	0,554 €	554,00 €
Full Reel (Order in multiples of 2500)
	0,445 €	1 112,50 €
	0,398 €	1 990,00 €
	0,391 €	9 775,00 €

GANB012-040CBAZ

Mfr.: Nexperia

Description: GaN FETs GANB012-040CBA/SOT8088/WLCSP12

Specifications

Documents (1)

Datasheet

Environmental Documents

Product & Trade Compliance

More Information

GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

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Mfr.:

Nexperia

Description:

GaN FETs GANB012-040CBA/SOT8088/WLCSP12

FEATURED PRODUCTS

NEXPERIA