STMicroelectronics MOSFETs

Results: 1 307
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 28 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220FP package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 36 A 80 mOhms - 25 V, 25 V 4.75 V 53.5 nC - 55 C + 150 C 42 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 950V 3 Ohm 4A Zener SuperMESH3 Non-Stocked Lead-Time 26 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 4 A 3 Ohms - 30 V, 30 V 3 V 19 nC - 55 C + 150 C 25 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220FP packag Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4.5 A 1.6 Ohms - 30 V, 30 V 4 V 13 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-CHANNEL 950 V 1.1 7.2 A TO-220 Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 7.2 A 1.35 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 35 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 8 A 600 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 5 A 790 mOhms - 25 V, 25 V 2 V 14 nC - 55 C + 150 C 20 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-220FP package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 900 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP ultra na Non-Stocked Lead-Time 24 Weeks
Min.: 2 000
Mult.: 1 000

Si MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP ultra Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 12 A 445 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si MDmesh Tube
STMicroelectronics MOSFETs Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET i Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 950 V 17.5 A 330 mOhms - 30 V, 30 V 5 V 48 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel
STMicroelectronics MOSFETs N-CH 80V 17mOhm 180A STripFET VII Lead-Time 22 Weeks
Min.: 1
Mult.: 1
: 1 000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 80 V 180 A 2.1 mOhms - 20 V, 20 V 2 V 193 nC - 55 C + 175 C 315 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs Automotive N-channel 100 V, 1.9 mOhm max., 292 A STripFET F8 Power MOSFET in an H2PAK-2 package Non-Stocked Lead-Time 22 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

Reel
STMicroelectronics MOSFETs Automotive N-channel 100 V, 1.9 mOhm max., 292 A STripFET F8 Power MOSFET in an H2PAK-6 package Non-Stocked Lead-Time 22 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

Reel
STMicroelectronics MOSFETs N-Ch 24V 0.95mOhm 180A STripFET Mosfet Non-Stocked Lead-Time 16 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 24 V 180 A 1.2 mOhms - 20 V, 20 V 1 V 109 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Reel
STMicroelectronics MOSFETs N-channel 60 V, 1.2 mOhm max., 397 A STripFET F7 Power MOSFET in an H2PAK-2 package Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1
: 1 000
Si SMD/SMT H2PAK-2 N-Channel 1 Channel 60 V 397 A 1.2 mOhms 20 V 4 V 230 nC - 55 C + 175 C 341 W Enhancement Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 60 V, 1.2 mOhm max., 397 A STripFET F7 Power MOSFET in an H2PAK-6 package Non-Stocked Lead-Time 22 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000
Si SMD/SMT H2PAK-6 N-Channel 1 Channel 60 V 397 A 1.2 mOhms 20 V 4 V 230 nC - 55 C + 175 C 341 W Enhancement Reel
STMicroelectronics MOSFETs Automotive-grade N-channel 600 V, 84 mOhm typ., 29 A MDmesh DM6 Power MOSFET in Non-Stocked Lead-Time 32 Weeks
Min.: 600
Mult.: 600
: 600

Si SMD/SMT N-Channel 1 Channel 600 V 29 A 99 mOhms - 25 V, 25 V 4.75 V 46 nC - 55 C + 150 C 210 W Enhancement AEC-Q101 Reel


STMicroelectronics MOSFETs Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1
: 600

Si SMD/SMT N-Channel 1 Channel 600 V 36 A 80 Ohms - 25 V, 25 V 4.75 V 55 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 17 A 179 mOhms - 25 V, 25 V 3 V 50 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel logic level 40 V, 2.7 mOhm max., 103 A STripFET F8 Power MOSFET Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000

Reel, Cut Tape
STMicroelectronics MOSFETs Automotive-grade dual N-channel 40 V, 3.5 mOhm typ., 40 A STripFET F7 Power MOSF Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 2 Channel 40 V 40 A 4.5 mOhms - 20 V, 20 V 1.5 V 27.5 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Non-Stocked Lead-Time 26 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

Si SMD/SMT PowerFLAT-8 N-Channel 1 Channel 100 V 44 A 13.3 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 52 W Enhancement STripFET Reel
STMicroelectronics MOSFETs N-channel logic level 40 V, 2.3 mOhm max., 124 A STripFET F8 Power MOSFET Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000
Reel, Cut Tape