STMicroelectronics MOSFETs

Results: 1 307
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs N-channel 800 V, 1.45 Ohm typ., 3 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH Non-Stocked Lead-Time 24 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

Si SMD/SMT PowerFLAT-5x6-VHV-8 MDmesh Reel
STMicroelectronics MOSFETs Automotive-grade N-channel 40 V, 7.0 mOhm typ., 64 A STripFET F7 Power MOSFET in Non-Stocked Lead-Time 24 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

Si AEC-Q101 Reel
STMicroelectronics MOSFETs Dual N-Ch 5.9mOhm 30V 20A STripFET V Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 2 Channel 30 V 20 A 5.9 mOhms - 22 V, 22 V 3 V 12 nC - 55 C + 175 C 72 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs Automotive-grade N-channel 30 V, 4 mOhm typ., 80 A STripFET H6 Power MOSFET in a Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 30 V 80 A 5.2 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 60 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 60 V 36 A 19 mOhms - 20 V, 20 V 2 V 8 nC - 55 C + 150 C 60 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs Automotive-grade N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 60 V 32 A 21 mOhms - 20 V, 20 V 1 V 27 nC - 55 C + 175 C 55 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs P-channel -100 V, 0.136 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 pac Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1
: 4 000

Si SMD/SMT TO-223-4 P-Channel 1 Channel 100 V 3 A 180 mOhms - 20 V, 20 V 4 V 16.5 nC - 55 C + 175 C 3.3 W Enhancement Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET Lead-Time 24 Weeks
Min.: 1
Mult.: 1
: 1 800

Si SMD/SMT TO-LL-8 N-Channel 1 Channel 600 V 25 A 125 mOhms - 25 V, 25 V 4.75 V 33.4 nC - 55 C + 150 C 230 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFETs N-channel 600 V, 70 mOhm typ., 36 A MDmesh M6 Power MOSFET Non-Stocked Lead-Time 24 Weeks
Min.: 1 800
Mult.: 1 800
: 1 800

Si SMD/SMT TO-LL-8 N-Channel 1 Channel 600 V 36 A 80 mOhms - 25 V, 25 V 3.25 V 52.2 nC - 55 C + 150 C 255 W Enhancement MDmesh Reel
STMicroelectronics MOSFETs N-channel 650 V, 37 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO-LL package Non-Stocked Lead-Time 52 Weeks
Min.: 1 800
Mult.: 1 800
: 1 800

Reel
STMicroelectronics MOSFETs N-Ch 650V 0.43 Ohm 9A MDmeshV 710V Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 5 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 370 mOhms - 25 V, 25 V 2 V 17 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 340 mOhms 85 W MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650 Volt 12 Amp Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 299 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V MDMesh M5 Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17 A 150 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 60 V, 2,1 Ohm typ., 120 A, STripFET F7 Power MOSFET in a TO-220 packag Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 120 A 2.4 mOhms - 20 V, 20 V 4 V 100 nC - 55 C + 175 C 237 W Enhancement STripFET Tube
STMicroelectronics MOSFETs N-Channel 1000V Zener SuperMESH Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 2 A 8.5 Ohms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 70 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 2.3 mOhms - 20 V, 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Tube

STMicroelectronics MOSFETs N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a TO-220 package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 128 mOhms - 25 V, 25 V 3.25 V 35 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 32 A 87 mOhms - 25 V, 25 V 2 V 56.5 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3 A 2.1 Ohms - 30 V, 30 V 3 V 3.7 nC - 55 C + 150 C 60 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 75 Volt 80 Amp Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 80 A 11 mOhms - 20 V, 20 V 2 V 117 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFETs N-Ch 800V .95Ohm 6A MDmesh K5 Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.2 Ohms - 30 V, 30 V 4 V 13.4 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube