STMicroelectronics MOSFETs

Results: 1 307
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 1 Channel 800 V 12 A 340 mOhms - 30 V, 30 V 3.5 V - 55 C + 150 C 115 W Enhancement Tube
STMicroelectronics MOSFETs N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package Non-Stocked Lead-Time 24 Weeks
Min.: 1 000
Mult.: 1 000

Si Through Hole TO-220-3 1 Channel 800 V 6 A 900 mOhms - 30 V, 30 V 3.5 V 7 nC - 55 C + 150 C 68 W Enhancement Tube
STMicroelectronics MOSFETs N-Ch 800V 0.76 Ohm 6 A MDmesh K5 Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 450V 3.2 Ohm 1.8A SuperMESH 3 Non-Stocked Lead-Time 26 Weeks
Min.: 3 000
Mult.: 3 000

Si Through Hole TO-251-3 N-Channel 1 Channel 450 V 1.8 A 3.8 Ohms - 30 V, 30 V 3 V 6 nC - 55 C + 150 C 27 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs POWER MOSFET N-CH 950V 4 A Non-Stocked Lead-Time 26 Weeks
Min.: 3 000
Mult.: 3 000

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 4 A 3 Ohms - 30 V, 30 V 3 V 19 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in an IPAK package Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 1.05 kV 4 A 2 Ohms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 110 W Enhancement SuperMESH

STMicroelectronics MOSFETs N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.05 kV 6 A 1.3 Ohms - 30 V, 30 V 3 V 21.5 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2 Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 108 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 69 mOhms - 25 V, 25 V 3.25 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole N-Channel 1 Channel 650 V 33 A 91 mOhms - 25 V, 25 V 4.75 V 52.5 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49 A 49 mOhms - 25 V, 25 V 2 V 93 nC - 55 C + 150 C 358 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packag Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 49 A 62 mOhms - 25 V, 25 V 2 V 93 nC - 55 C + 150 C 358 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO247-4 package Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 63 A 41 mOhms - 25 V, 25 V MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 package Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 long lead Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 620 mOhms - 30 V, 30 V 3 V 44.2 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 87 mOhms - 25 V, 25 V 3 V 69 nC - 55 C + 150 C 300 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 41 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Channel 650V 93A 0.019 Ohm Mdmesh M5 Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 96 A 19 mOhms - 25 V, 25 V 4 V 350 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 500 Volt 60 Amp Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole Max247-3 N-Channel 1 Channel 500 V 60 A 50 mOhms - 30 V, 30 V 3 V 266 nC - 65 C + 150 C 560 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 600V, 10A FDMesh II Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10 A 450 mOhms - 25 V, 25 V 3 V 30 nC - 55 C + 150 C 90 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N Ch 500V 0.98 OHM 5.6A Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5.6 A 1.2 Ohms - 30 V, 30 V 4.5 V 24.6 nC - 55 C + 150 C 90 W Enhancement SuperMESH
STMicroelectronics MOSFETs N-channel 600 V, 0.95 Ohm typ 5 A MDmesh DM2 Power MOSFET Non-Stocked Lead-Time 52 Weeks
Min.: 2 000
Mult.: 1 000

Si MDmesh Tube

STMicroelectronics MOSFETs N-channel 600 V, 520 mOhm typ 6.4 A MDmesh M6 Power MOSFET Non-Stocked Lead-Time 18 Weeks
Min.: 920
Mult.: 920

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 6.4 A 600 mOhms - 25 V, 25 V 3.25 V 8.8 nC - 55 C + 150 C 20 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs LGS LV MOSFET Non-Stocked Lead-Time 20 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 40 V 180 A 1.7 mOhms - 20 V, 20 V 2 V 115 nC - 55 C + 175 C 300 W Enhancement AEC-Q101 STripFET Reel