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LMG3522R030QRQSRQ1

Name: Texas Instruments LMG3522R030QRQSRQ1
Brand: Texas Instruments
SKU: 595-G3522R030QRQSRQ1
Price: 17.72 EUR
Availability: OutOfStock

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Mouser No:

595-G3522R030QRQSRQ1

Mfr. No:

LMG3522R030QRQSRQ1

Mfr.:

Texas Instruments

Description:

Gate Drivers Automotive 650-V 30- m? GaN FET with int

Datasheet:

LMG3522R030QRQSRQ1 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
REACH - SVHC:
Product:	Power Switch ICs
Type:	High Side Switch
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Number of Outputs:	1 Output
Output Current:	50 mA
Supply Voltage - Min:	7.5 V
Supply Voltage - Max:	18 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3522R030
Packaging:	Reel
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs

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Filter Document:

Datasheet

LMG3522R030QRQSRQ1 Datasheet

PCN

Product Change Notification 2024-02-27 (PDF)

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs

Texas Instruments LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs include an integrated driver and protection for switch-mode power converters. The LMG3522R030/LMG3522R030-Q1 integrates a silicon driver that allows switching speeds up to 150V/ns. The device implements TI’s integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, supplies clean switching and minimal ringing in hard-switching power supply topologies. An adjustable gate drive strength permits control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.