GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
SemiQ SemiQ Gen3 1200V 14m SiC MOSFET TO-247-4L Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 17m SiC MOSFET TO-247-4L Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 34m SiC MOSFET TO-247-4L Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 16m SiC MOSFET TSPak Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 20m SiC MOSFET TSPak Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 40m SiC MOSFET TSPak Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 40mO SiC MOSFET TO-247-3L Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 72mO SiC MOSFET TO-247-4L Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 80m SiC MOSFET TO-263-7L Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

SemiQ SemiQ Gen3 1200V 80m SiC MOSFET TSPak Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1