AS4C32M8SA-7TCN

Alliance Memory
913-AS4C32M8SA7TCN
AS4C32M8SA-7TCN

Mfr.:

Description:
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray

ECAD Model:
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In Stock: 9 932

Stock:
9 932 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,07 € 5,07 €
4,73 € 47,30 €
4,58 € 114,50 €
4,48 € 224,00 €
3,09 € 333,72 €
3,03 € 654,48 €
3,01 € 1 625,40 €
2,99 € 3 229,20 €
2,80 € 7 257,60 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
8 bit
143 MHz
TSOP-II-54
32 M x 8
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C32M8SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
Unit Weight: 2,171 g
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Attributes selected: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320299
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.