DI008N09SQ

Diotec Semiconductor
637-DI008N09SQ
DI008N09SQ

Mfr.:

Description:
MOSFETs MOSFET, SO-8, 90V, 8A, 150C, N

ECAD Model:
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In Stock: 3 970

Stock:
3 970 Can Dispatch Immediately
Quantities greater than 3970 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,765 € 0,77 €
0,501 € 5,01 €
0,326 € 32,60 €
0,263 € 131,50 €
0,236 € 236,00 €
0,217 € 434,00 €
Full Reel (Order in multiples of 4000)
0,196 € 784,00 €
0,166 € 1 328,00 €
0,164 € 3 936,00 €

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SO-8
DI008N09SQ
Reel
Cut Tape
Brand: Diotec Semiconductor
Product Type: MOSFETs
Series: DI0XX
Factory Pack Quantity: 4000
Subcategory: Transistors
Part # Aliases: N-CHANNEL
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Attributes selected: 0

TARIC:
8541290000
USHTS:
8541290000
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI008N09SQ N-Channel Power MOSFET

Diotec Semiconductor DI008N09SQ N-Channel Power MOSFET is a 90V drain-source voltage (VDSS) N-channel power MOSFET in a tiny, space-saving SO-8 package. It comes with an 8A continuous drain current (ID) and 2W power dissipation (Ptot). The device offers a low drain-source on-state resistance of 75mΩ typical (VGS=4.5V ID=3A). The Diotec Semiconductor DI008N09SQ is ideal for power management units, battery-powered devices, load switches, polarity protection, and DC/DC converter applications.