IXFN210N30P3

IXYS
747-IXFN210N30P3
IXFN210N30P3

Mfr.:

Description:
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode

Datasheet:
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Learn more about IXYS IXFN210N30P3

In Stock: 493

Stock:
493 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
47,33 € 47,33 €
38,35 € 383,50 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
300 V
192 A
14.5 mOhms
- 20 V, + 20 V
- 55 C
+ 150 C
1.5 kW
IXFN210N30
Tube
Brand: IXYS
Configuration: Single
Fall Time: 13 ns
Product Type: MOSFET Modules
Rise Time: 25 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: HiperFET
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 46 ns
Unit Weight: 30 g
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Datasheet

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Commercial & Tactical UAV Systems

Littelfuse Commercial and Tactical Unmanned Aerial Vehicle (UAV) Systems offer solutions for Li-Ion battery protection, battery chargers, and power distribution. These systems provide fuses for input protection/overcurrent protection, MOSFETs for semiconductor switching, and TVS diodes for DC output transient/surge protection. The commercial and tactical UAV systems offer battery protection >60V and provide main-pack fault isolation, battery disconnect/power path control (pre-charge support), and branch circuit overcurrent protection. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, border surveillance, agriculture, delivery/logistics, inspection, and public safety.

Fuel-Powered/Hybrid Military UAV Systems

Littelfuse Fuel-Powered/Hybrid Military Unmanned Aerial Vehicle (UAV) Systems offer solutions for power conversion and DC bus, power distribution, and charger/ground power. These systems support power conversion and a DC bus with a rectifier diode that converts AC line voltage to DC. The fuel-powered/hybrid military Unmanned Aerial Vehicle (UAV) systems provide TVS diodes, fuses, and MOSFETs for semiconductor switches, surge protection, and rectification. These systems offer AEC-Q/MIL-grade products across various functions. Typical applications include Intelligence, Surveillance, and Reconnaissance (ISR), military, and border surveillance.

Drone Subsystems

Littelfuse Drone Subsystems offer solutions for USB-C PD and Li-ion battery chargers, battery pack systems, and BLDC motors. These subsystems offer fuses for various functions, including AC input overcurrent protection and fault isolation, protection of the battery and downstream controller, pack, wiring, and controller. The drone subsystems provide TVS diodes for primary-side switching transient suppression and cell monitor IC sense line input overvoltage protection. These subsystems are appropriate for various drones, including toy, camera, First-Person View (FPV), enterprise, industrial, Intelligence, Surveillance, and Reconnaissance (ISR), inspection/mapping, agriculture, and heavy lift. Typical applications include delivery/logistics, public safety, border surveillance, and military.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

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