IXTQ180N10T

IXYS
747-IXTQ180N10T
IXTQ180N10T

Mfr.:

Description:
MOSFETs 180 Amps 100V 6.1 Rds

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
23 Weeks Estimated factory production time.
Minimum: 300   Multiples: 30
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,15 € 945,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-3P-3
N-Channel
1 Channel
100 V
180 A
6.4 mOhms
- 55 C
+ 175 C
480 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 31 ns
Product Type: MOSFETs
Rise Time: 54 ns
Series: IXTQ180N10
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 33 ns
Unit Weight: 5,500 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.