IMZA65R050M2HXKSA1

Infineon Technologies
726-IMZA65R050M2HXKS
IMZA65R050M2HXKSA1

Mfr.:

Description:
SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Infineon Technologies IMZA65R050M2HXKSA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
38 A
62 mOhms
- 7 V, + 23 V
5.6 V
22 nC
- 55 C
+ 175 C
153 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4.4 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 7.6 ns
Series: 650V G2
Factory Pack Quantity: 240
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 13.5 ns
Typical Turn-On Delay Time: 8.1 ns
Part # Aliases: IMZA65R050M2H
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
China
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies  CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion.  Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.

In Stock: 230

Stock:
230 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,65 € 8,65 €
5,10 € 51,00 €
4,32 € 432,00 €
4,18 € 2 006,40 €

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.