PXAE263708NB-V1-R2

Name: MACOM PXAE263708NB-V1-R2
Brand: MACOM
SKU: 941-PXAE263708NBV1R2
Price: 101.46 EUR
Availability: InStock

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Mouser No:

941-PXAE263708NBV1R2

Mfr. No:

PXAE263708NB-V1-R2

Mfr.:

MACOM

Description:

RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz

Datasheet:

PXAE263708NB-V1-R2 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Vds - Drain-Source Breakdown Voltage:	65 V
Rds On - Drain-Source Resistance:	80 mOhms
Operating Frequency:	2.62 GHz to 2.69 GHz
Gain:	13.5 dB
Output Power:	400 W
Maximum Operating Temperature:	+ 225 C
Mounting Style:	Screw Mount
Package/Case:	HB2SOF-8-1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	MACOM
Number of Channels:	1 Channel
Product Type:	RF MOSFET Transistors
Factory Pack Quantity:	250
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	- 6 V to + 10 V

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Datasheet

PXAE263708NB-V1-R2 Datasheet (PDF)

PCN

Product Change Notification 2024-04-25 (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290055
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications.