MSC030SDA120B

Microchip Technology
494-MSC030SDA120B
MSC030SDA120B

Mfr.:

Description:
SiC Schottky Diodes 1200 V, 30 A SiC SBD
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Datasheet:
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In Stock: 835

Stock:
835 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,20 € 9,20 €
8,49 € 254,70 €
7,39 € 886,80 €

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-2
Single
69 A
1.2 kV
1.5 V
280 A
9 uA
- 55 C
+ 175 C
MSC0
Tube
Brand: Microchip Technology
Pd - Power Dissipation: 300 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 8,522 g
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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

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