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TP65H070G4LSGBA-TR

Name: Renesas Electronics TP65H070G4LSGBA-TR
Brand: Renesas Electronics
SKU: 227-P65H070G4LSGBATR
Price: 2.68 EUR
Availability: OutOfStock

Mouser No:

227-P65H070G4LSGBATR

Mfr. No:

TP65H070G4LSGBA-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Vds - Drain-Source Breakdown Voltage:	650 V
Tradename:	SuperGaN
Brand:	Renesas Electronics
Moisture Sensitive:	Yes
Packaging:	Reel
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Attributes selected: 0

Compliance Codes

USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.