2SD2012

STMicroelectronics
511-2SD2012
2SD2012

Mfr.:

Description:
Bipolar Transistors - BJT NPN Silcon Pwr Trans
Complete Your Design

Lifecycle:
Obsolete
Datasheet:
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Availability

Stock:

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Bipolar Transistors - BJT
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
Through Hole
TO-220F-3
NPN
Single
3 A
60 V
60 V
7 V
400 mV
25 W
3 MHz
- 65 C
+ 150 C
2SD2012
Tube
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
DC Collector/Base Gain hFE Min: 20
DC Current Gain hFE Max: 320
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 50
Subcategory: Transistors
Unit Weight: 3,610 g
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Attributes selected: 0

Datasheet

EOL

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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STMICROELECTRONICS

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