EVLSTDRIVEG212

STMicroelectronics
511-EVLSTDRIVEG212
EVLSTDRIVEG212

Mfr.:

Description:
Power Management IC Development Tools Evaluation board for STDRIVEG212 220 V high-speed half-bridge gate driver with 2.2 mOhms, 100 V e-mode GaN HEMT

Lifecycle:
New Product:
New from this manufacturer.

In Stock: 16

Stock:
16 Can Dispatch Immediately
Minimum: 1   Multiples: 1   Maximum: 5
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
51,59 € 51,59 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Power Management IC Development Tools
Evaluation Boards
Gate Driver
12 V
STDRIVEG212
Brand: STMicroelectronics
Dimensions: 56 mm x 79 mm
Packaging: Bulk
Product Type: Power Management IC Development Tools
Factory Pack Quantity: 1
Subcategory: Development Tools
Unit Weight: 100 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8473302000
USHTS:
8473301180

EVLSTDRIVEG212 Evaluation Board

STMicroelectronics EVLSTDRIVEG212 Evaluation Board is easy to use, as well as quick and suitable for evaluating the characteristics of the STDRIVEG212 driving two 2.2mΩ (typical), 100V emode GaN switches in a half-bridge configuration. The STDRIVEG212 is a 220V high-speed half-bridge gate driver optimized for 5V driving enhanced-mode GaN HEMTs. It features separated high-current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault/shutdown pins, and standby to fully support hard-switching topologies in a 4mm x 5mm QFN package. The EVLSTDRIVEG212 board is also suitable for evaluating the STDRIVEG612 features.