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FERD40H100SFP

Name: STMicroelectronics FERD40H100SFP
Brand: STMicroelectronics
SKU: 511-FERD40H100SFP
Price: 0.72 EUR
Availability: InStock

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Mouser No:

511-FERD40H100SFP

Mfr. No:

FERD40H100SFP

Mfr.:

STMicroelectronics

Description:

Rectifiers 100 V, 40 A Field-Effect Rectifier Diode (FERD)

Complete Your Design

Datasheet:

FERD40H100SFP Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics FERD40H100SFP

In Stock: 4

Stock:: 4

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On Order:: 2 000

Expected 02/03/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,722 €	0,72 €
	0,547 €	5,47 €
	0,523 €	52,30 €
	0,504 €	252,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Rectifiers
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220FPAB-3
Vr - Reverse Voltage:	100 V
If - Forward Current:	40 A
Type:	Standard Recovery Rectifier
Configuration:	Single
Vf - Forward Voltage:	645 mV
Max Surge Current:	440 A
Ir - Reverse Current:	190 uA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 175 C
Series:	FERD40H100S
Packaging:	Tube
Brand:	STMicroelectronics
Product:	Rectifiers
Product Type:	Rectifiers
Factory Pack Quantity:	50
Subcategory:	Diodes & Rectifiers
Unit Weight:	2 g

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Datasheet

FERD40H100SFP Datasheet (PDF)

PCN

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

FERD Field Effect Rectifiers

STMicroelectronics Field-Effect Rectifier Diodes (FERDs) help improve applications with designs focusing on trade-off upgrades. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes. Depending on the targeted application and its voltage, developers can now choose the best compromise in terms of forward voltage drop (VF) and leakage current (IR).