MASTERGAN3TR

STMicroelectronics
511-MASTERGAN3TR
MASTERGAN3TR

Mfr.:

Description:
Gate Drivers High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 461

Stock:
461 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 461 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
4,09 € 4,09 €
3,45 € 34,50 €
3,29 € 82,25 €
3,27 € 327,00 €
Full Reel (Order in multiples of 3000)
3,00 € 9 000,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFN-31
2 Driver
4 Output
4 A, 6.5 A
4.75 V
9.5 V
- 40 C
+ 125 C
MASTERGAN
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Compliance Codes
CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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