MASTERGAN4LTR

STMicroelectronics
511-MASTERGAN4LTR
MASTERGAN4LTR

Mfr.:

Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1 361

Stock:
1 361 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1361 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,43 € 5,43 €
4,15 € 41,50 €
3,84 € 96,00 €
3,49 € 349,00 €
3,33 € 832,50 €
3,23 € 1 615,00 €
3,19 € 3 190,00 €
Full Reel (Order in multiples of 3000)
3,15 € 9 450,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge
SMD/SMT
QFN-31
4 Output
12 A
4.75 V
9.5 V
Non-Inverting
- 40 C
+ 125 C
MASTERGAN
Reel
Cut Tape
Brand: STMicroelectronics
Maximum Turn-Off Delay Time: 45 ns
Maximum Turn-On Delay Time: 45 ns
Moisture Sensitive: Yes
Operating Supply Current: 6.5 A
Pd - Power Dissipation: 40 mW
Product Type: Gate Drivers
Propagation Delay - Max: 70 ns
Rds On - Drain-Source Resistance: 495 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.