SCTWA90N65G2V-4

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Mouser No:

511-SCTWA90N65G2V-4

Mfr. No:

SCTWA90N65G2V-4

Mfr.:

STMicroelectronics

Lifecycle:

Obsolete

Datasheet:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	119 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	157 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	565 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	16 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	38 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	26 ns
Unit Weight:	6,080 g