SCTWA90N65G2V-4

STMicroelectronics
511-SCTWA90N65G2V-4
SCTWA90N65G2V-4

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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In Stock: 111

Stock:
111 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 111 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
25,04 € 25,04 €
18,94 € 189,40 €
18,13 € 1 813,00 €
17,27 € 10 362,00 €

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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-4
N-Channel
1 Channel
650 V
119 A
24 mOhms
- 10 V, + 22 V
5 V
157 nC
- 55 C
+ 200 C
565 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 16 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 38 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 58 ns
Typical Turn-On Delay Time: 26 ns
Unit Weight: 6,080 g
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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