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STD80N6F7

Name: STMicroelectronics STD80N6F7
Brand: STMicroelectronics
SKU: 511-STD80N6F7
Price: 1.42 EUR
Availability: OutOfStock

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Mouser No:

511-STD80N6F7

Mfr. No:

STD80N6F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 60 V, 6.8 mOhm typ., 40 A STripFET F7 Power MOSFET in a DPAK package

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Datasheet:

STD80N6F7 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,42 €	1,42 €
	0,877 €	8,77 €
	0,574 €	57,40 €
	0,452 €	226,00 €
	0,386 €	386,00 €
Full Reel (Order in multiples of 2500)
	0,312 €	780,00 €
	0,31 €	1 550,00 €
	0,304 €	3 040,00 €
	0,291 €	7 275,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.8 ns
Product Type:	MOSFETs
Rise Time:	17.6 ns
Series:	STD80N6F7
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24.4 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	360 mg

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Datasheet

STD80N6F7 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Not available
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.