It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD8NF25

Name: STMicroelectronics STD8NF25
Brand: STMicroelectronics
SKU: 511-STD8NF25
Price: 1.16 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD8NF25

Mfr. No:

STD8NF25

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 250 V 318 mOhm 8 A STripFET II

Complete Your Design

Datasheet:

STD8NF25 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD8NF25

In Stock: 2 279

Stock:: 2 279 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,16 €	1,16 €
	0,727 €	7,27 €
	0,48 €	48,00 €
	0,373 €	186,50 €
	0,34 €	340,00 €
Full Reel (Order in multiples of 2500)
	0,284 €	710,00 €
	0,267 €	1 335,00 €
	0,251 €	2 510,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	420 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	72 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	STD8NF25
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STD8NF25 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET II™ Power MOSFETs

STMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a gate structure. The resulting STripFET™ Power MOSFET exhibits a high current and low R_DS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well-established planar technology for high-efficiency, low-voltage systems.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.